Booster etch 2.0
Developments in Microwave Induced Plasma to enter the next phase of industry adoption of MIP for failure analysis and reliability testing of semiconductor devices
Booster Etch 2.0 develops next-generation plasma-based technology for semiconductor decapsulation. Using Microwave Induced Plasma (MIP), it provides a safe and clean alternative to chemical methods. The project significantly increases processing speed while improving analysis reliability and supporting more sustainable semiconductor manufacturing.
Innovative plasma technology for advanced semiconductor analysis
The project focuses on significantly increasing the speed of the MIP decapsulation process by optimizing plasma etching mechanisms and implementing advanced oxygen injection techniques. By enlarging the effective etching area and increasing the mass etch rate, a fourfold acceleration is targeted. This enables large-scale industrial adoption and supports the transition to safe, reproducible, and chemical-free analysis methods.