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MOXY

Multilayer growth optimization by hybrid X-ray metrology

The functional properties of modern nano-devices, for example products of the semiconductor industry, depend on parameters of their internal structure such as layer thickness, density and sharpness of interfaces between the layers. The deviation of any such parameter from its design value beyond acceptable tolerance - often measured in fractions of nanometers - will cause the device (or chip) to malfunction.

Full characterization of nanostructures

The optimization of production processes of such devices requires efficient and accurate metrology, capable of characterizing all essential paraments. There are multiple metrology approaches, capable of analyzing individual parameters, but a ‘one-shot’ full characterization of nanostructures remains a challenge.

Efficient metrology for layered nano-structures

Currently available method developed at universities and research institutes, while effective, suffer from complexity and therefore limited applicability in industrial settings. MOXY aims to develop the scientific understanding enabling an efficient metrology for layered nano-structures, and as such, will support crucial development for the semiconductor industry.

Multiple datasets within a single, comprehensive model

We will explore a hybrid X-ray metrology approach, which will combine multiple datasets within a single, comprehensive model. The proposed platform integrates various X-ray techniques, including X-ray reflectivity, standing waves, and off-specular scattering, to achieve a ‘one-shot’ structural analysis of layers nanostructures.

Facts & figures
  • Scheme: PPS-I Strategische Programma's
  • Programme: Semiconductor Manufacturing Equipment | 2024-2027
  • Total budgeted project costs: € 598.800,00
  • Project start date: 1 July 2024
  • Project end date: 30 June 2029
Project managers
Project consortium
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